ABSTRACT
At present, the AMLCD and AMOLED TFT technologies are mainly the polycrystalline silicon(poly-Si) TFT and amorphous silicon(a-Si) TFT. The preparation process of a-Si TFT is simple, and its technology is mature. It has the absolute advantages in cost and large area display. However, its carrier mobility is low, in addition, it exists some problems such as photosentive reaction in the visible wavelength range, being opaque to the visible light. Polycrystalline silicon thin film transistor has high carrier mobility, quick response speed, strong anti-interference ability and good device performance. However, its preparation process is more complex, it needs to excimer laser rectystallization treatment, thereby the manufacturing cost is increased (Yu 2006, Fujimoto et al. 2005).
