ABSTRACT
GaAs substrate, it is needed to optimize the layer thickness and growth conditions to minimize the crystal defects associated with the strain. In this article, we investigate optical properties of GaAsSb/InGaAs QWs grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and compare the experimentally determined transition energies with the ones calculated by solving the block-diagonalized 3x3 Hamiltonian based on the k• p method and self-consistent method. The Type II alignment with the unstrained valence band edge discontinuity ratio Qwo of about 0.8 has been deduced.
