ABSTRACT
Henri Happy,a Laurianne Nougaret,a Nan Meng,a Emmanuelle Pichonat,a Vincent Derycke,b Dominique Vignaud,a and Gilles Dambrineaa IEMN UMR-CNRS 8520, Université Lille 1,Cité Scientifique, BP 60069, Avenue Poincaré, 59652 Villeneuve d’Ascq, Franceb CEA Saclay, IRAMIS, Service de Physique de l’Etat Condensé (URA 2464), Laboratoire d’Electronique Moléculaire, 91191, Gif sur Yvette, France henri.happy@iemn.univ-lille1.fr
(SiC) substrate, using thermal decomposition approach. One of our main objectives was to obtain large-area and high-quality material, in order to develop high-frequency graphene-based devices. To achieve high dynamic performance, a field effect transistor with an array of graphene nanoribbons connected in parallel was fabricated using e-beam lithography. The best intrinsic current gain cut-off frequency of 60 GHz and maximum oscillation frequency of 28 GHz were achieved.
