ABSTRACT
This chapter discusses the application of nonohmic law in a carbon nanotube field effect transistor (CNFET) circuit. It examines the RC transient response in CNFET by applying the nonohmic law. The chapter discusses the load capacitor and frequency response of CNFET. It also discusses the propagation delay in CNFET logic gates. The chapter validates the application of nonohmic law in CNFET circuit by comparing the theoretical results with those of Hspice simulation results. It examines the performance of the established CNFET model at circuit level, the RC transient response in CNFET circuit. The chapter provides the evidence to state that having sized the metal–oxide–semiconductor field-effect transistor (MOSFET) leading to the trend of multichannel CNFET facilitates a better performance than the CNFET model. It discusses the two quality measures, which indeed examine the overall performance of CNFET in logic gates and compare it with that of logic gates made of state-of-the-art MOSFET.
