ABSTRACT
This chapter provides a perspective of the carbon nanotube (CNT)–based field effect transistor to help us understand nanoscale device physics. It discusses the carrier transport phenomenon in carbon nanotube field effect transistors (CNTFETs) based on the quantum confinement effect. CNTFETs are generally known as p-type devices, and the holes are considered as current carriers; hence, if there is a negative gate bias, the devices will be ON. Depending on the type of doping, the Partially Gated-CNTFETs can be n-type or p-type when n-doped or p-doped, respectively. In 1998, the first CNTFET was fabricated, after which CNTFET modeling and simulations have been done by many researchers. The cross-section geometry effect on the wave function especially in the quantum-confined directions can be seen in CNTs. V. K. Arora modified the equilibrium distribution function of Fermi–Dirac by replacing the chemical potential with the electrochemical potential. This distribution function can be explained by a tilted band diagram.
