ABSTRACT
Y H Zhang, X Y Chen and W Z Shen* Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, China
Abstract. We demonstrate the function of the reflection spectra on extracting carrier concentrations in n-GaAs homojunction far-infrared (FIR) detector structures that have attracted considerable attention due to the unique feature of tailorable cutoff wavelength. Evidence has been provided for the formation of GaAs homojunction FIR detection occurring at the emitter/intrinsic interfaces.
