ABSTRACT
We present here a novel atomic layer re-deposition (ALrD) technique to overcome intrinsic limitations induced by reactive ion etching (RIE) in the case of the fabrication of nanostructured photonic devices. Through several examples, we demonstrate how the ALrD method allows the formation of features with ultra-small size, below the resolution of classical lithography and RIE. The proposed method can be particularly beneficial in nanophotonic applications in the near-infrared and in the visible range of light, where dimensions of a few tens of nanometers are required with an extreme accuracy.
