ABSTRACT
In order to describe the evolution of the flow, temperature, and dopant concentration in the melt in a Bridgman-Stockbarger crystal growth system, a continuum mechanical model is presented. The equations of the model are the classical Navier-Stokes equation in the Boussinesq approximation, the classical incompressibility equation as well as a modified energy equation and a modified dopant dispersion equation. The classical energy and dopant transport equations were modified due to the thermotransport and precrystallizationzone influences. We give a model-based simulation of the flow, heat transport, and Ga dispersion evolution in the melt and prediction of axial and radial Ga distribution in a Ga-doped Ge semiconductor crystal grown in a strictly zero-gravity and a low-gravity environment. We present adequate initial Ga distribution in the melt for obtaining uniform Ga distribution in the crystal.
