ABSTRACT
Infrared (IR) devices for the thermal 3- to 12-μm wavelength range fabricated in narrow-gap semiconductors (NGS) exhibit highest sensitivity at a given operating temperature. Growing the NGS layers directly on Si would lead to much simpler monolithic heteroepitaxial structures. The IR sensor pixels are integrated into the NGS layer, while the Si substrate serves as a rigid support and may even contain active readout electronics. This chapter describes photovoltaic IR lead chalcogenide sensor arrays grown on Si substrates and mainly intended for thermal imaging applications in the 3- to 5-μmand 8- to 12-μmm atmospheric windows. Growth of IV-VI materials on Si substrates without a buffer layer also is possible.
