ABSTRACT

1

Introduction

2

Bonding in Beryllium Chalcogenides

3

Thin Film Growth

4

Optical, Structural and Electronic Properties

 4.1

BeSe

 4.2

BeTe

  4.2.1

Band Offsets

  4.2.2

p-Type. Doping

  4.2.3

Defect Reduction with BeTe Buffer Layers

 4.3

BeMgZnSe

5

Device Structures

 5.1

Resonant Tunneling Structures

 5.2

Photodetectors

 5.3

Light Emitting Devices

  5.3.1

BeMgZnSe-BeZnSe-ZnCdSe Laser Diodes

  5.3.2

BeZnCdSe Active Region

  5.3.3

BeTe-ZnSe Active Region

  5.3.4

BeZnSe-Zn(Cd)Se Waveguides

  5.3.5

CdSe Fractional Monolayer Active Regions

6

Epitaxy on Silicon

7

Summary

References