ABSTRACT
1
Introduction
2
Bonding in Beryllium Chalcogenides
3
Thin Film Growth
4
Optical, Structural and Electronic Properties
4.1
BeSe
4.2
BeTe
4.2.1
Band Offsets
4.2.2
p-Type. Doping
4.2.3
Defect Reduction with BeTe Buffer Layers
4.3
BeMgZnSe
5
Device Structures
5.1
Resonant Tunneling Structures
5.2
Photodetectors
5.3
Light Emitting Devices
5.3.1
BeMgZnSe-BeZnSe-ZnCdSe Laser Diodes
5.3.2
BeZnCdSe Active Region
5.3.3
BeTe-ZnSe Active Region
5.3.4
BeZnSe-Zn(Cd)Se Waveguides
5.3.5
CdSe Fractional Monolayer Active Regions
6
Epitaxy on Silicon
7
Summary
References