Effect of temperature on structure and properties of MoS2 crystal grown by chemical vapor deposition

To meet the need for preparing high-performance two-dimension materials electrical and optical devices based on single-layer MoS₂, the effects of the heating temperature of S and MoO₃ on the morphology, size, structure and layers of a MoS₂ crystal grown on sapphire substrate by using chemical vapor deposition are studied in this paper. The results show that the growth of MoS₂ crystal depends on the temperature. Either a too low or too high of the heating temperatures of S and MoO₃ are not conducive to the formation of MoS₂. When the temperature of S is in the range from 160 to 180°C and the temperature of MoO₃ is in the range from 795 to 820°C, the size of MoS₂ increases with increasing the temperature. A uniform large-sized triangle with a side length of 90 μm is obtained when the heating temperature of MoO₃ is 820°C and the heating temperature of S is 180°C.