ABSTRACT
The Insulated Gate Bipolar Transistor (IGBT) utilizes both controlling MOSFET-like devices and conducting bipolar-like devices to generate high input impedance and high current gain. As the insulted gate is applied with a bias, the channel is then strongly inversed and becomes conductive making the current flow internally and diversely switching on the underlying NPN and PNP devices. Therefore, the trans-conductance (Gm) sufficiently interprets the gate controllability of the speed over the whole device. The electrical performances of three various gate sizes on eight different process flows at four different temperatures (25°C, 50°C, 75°C, and 100°C) are measured for comparison. The size of the gate and the process conditions (including implant dose and energy and thermal budget) are closely associated with the junction depth, profile and even contour. The high Gm, as plotted in the following figure, helps determine the size to be selected for design and the process conditions to be chosen for fabrication. Additionally, the temperature effects on Gm expose the dominating mechanism in the devices.
