ABSTRACT
This chapter reviews structural studies of the location of the Mn atoms in III-Mn-V dilute magnetic semiconductors (DMS) and the role of Fermi energy and Mn doping levels on site location. It describes the influence of Mn on the valence band structure of the host that is used to explain the trends in the electrical and optical properties of group III-Mn-V DMS and their alloys. The chapter focuses on the limitations of substitutional MnGa incorporation and the maximum hole concentration imposed by the location of the host valence band edge with respect to the Fermi level stabilization energy, EFS. Ion channeling techniques have been applied extensively to determine lattice site locations of impurities in semiconductors and metals and are important tools for investigating the incorporation of Mn into III-V compounds. The single energy values of EMn and EMn-SO represent the energetic positions of the localized heavy/light hole and spin-orbit split-off Mn states, respectively, relative to the host valence band edge.
