ABSTRACT
The experimental data are reported concerning the dependence of the velocity of isolated dislocations in Si and Ge single crystals on the stresses, temperature and doping level in a large range of their variation. The results of the investigations of the asymmetry of the dislocation mobility under the condition of load sign alternation are presented too. The results obtained are compared with the predictions of the current theories of the dislocation motion in a deep potential relief of the crystal lattice. The most paradoxical discrepances between theory and experiment are discussed.
