ABSTRACT
A quantitative TEM analysis of the dislocation structure at the lower yield point of silicon is reported. A fair agreement is obtained at low temperature (T ≲ 900 K), low strain rate https://www.w3.org/1998/Math/MathML"> ( γ ˙ ~ 2.10 − 5 s − 1 ) https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9780429070914/679f2623-d509-4a65-a488-93e3a3b19d40/content/eq1265.tif" xmlns:xlink="https://www.w3.org/1999/xlink"/> between the measured strain rate and the one calculated with Orowan formula using direct estimates of the mobile dislocation density and effective stress.
