ABSTRACT
The doping effect of dislocation mobility in semiconductors has been interpreted in terms of energy levels of kinks and dependence of kink density and kink migration energy on the Fermi level as suggested by Hirsch and Jones. The mobility difference between α- and β-dislocations has been explained by taking into account the difference in dislocation line charge. The radiation enhanced dislocation glide (REDG) effect is understood by considering that lattice distortion around a kink is dynamically relieved upon charge state change of the kink and induces a kink jump. The REDG effect is also affected by the dislocation line charge. A semi quantitative model for GaAs is outlined.
