ABSTRACT
Dynamic behavior of dislocations in GaAs crystals at elevated temperature under stress is investigated by means of in situ X-ray topography on a macroscopic scale and by means of in situ transmission electron microscopy on a microscopic scale. The movement of α dislocations is characterized by extreme jerkiness while that of β dislocations by viscousness. Screw dislocations of opposite signs move at velocities different by a factor two. The faster dislocation has the leading partial of 30° a type while the slower one has the leading partial of 30° β type.
