ABSTRACT
Dislocation motion and the inertial effect on it are investigated by the measurements of the flow stresses of highly pure CsI, Ba++ doped CsI and CsI-CsBr mixtures. In these crystals very large positive temperature dependence of flow stress and the divergence of activation volume are always observed at low temperatures. These indicate that the inertial effect plays an important role in the motion of dislocations at low temperatures. The magnitude of radiation loss from accelerating dislocations is estimated from the flow stress at OK to be 4–5 times larger than Eshelby’s estimate.
