Logarithmic Temperature Dependence of the Dislocation Resistivity in Aluminum Dilute Alloys

Electrical resistivities due to dislocations ρ_d(T) in dilute Al-Mg, -Si and -Ge alloys were measured. The dislocation resistivity has a minimum at a temperature below which ρ_d(T) shows a (-log T)-dependence. The behavior of the logarithmic temperature dependence is very sensitive to the dislocation density, the configurations, the species of the solute atoms and the concentrations. The logarithmic temperature dependence of ρ_d(T) is discussed on the basis of the scattering mechanism due to the Kondo effect or the two-level system.