ABSTRACT
The weak-beam electron Microscopy technique [1] is used to study the climb of dissociated dislocations in Cu-13.43at.%A1 and Cu-4at.%Si under vacancy supersaturation introduced by quenching. Climb configurations are described and compared to those obtained by electron irradiation [2]. They are mostly the same but more kinds of defects are present in the vacancy case. A criterion allowing to distinguish between vacancy and interstitial climb is presented.
