ABSTRACT
Two kinds of paramagnetic defects are produced during plastic deformation of silicon crystals. The density of those defects is correlated to the shear strain, not to the dislocation density. This indicates that they are not intrinsic ingredients of mobile dislocations, but products of dislocation motion below a critical temperature. From the big scatter of dissociation width of dislocations it is concluded that the motion of two coupled partials is influenced by a stochastical process.
