ABSTRACT
The basic features of a tight-binding recursion approach are briefly sketched, which explicitely exploits the translational symmetry along the dislocation line. Results are presented (i) about the deep electron levels at the 90°-partials in CdTe (taking into account charge transfer and Coulomb contributions in the tight binding parameters) and (ii) about the local densitiy of d-states in the core of the 71°-dislocation in α-Fe (accounting for the effect of changes in the d-bands on the core structure).
