ABSTRACT
The defect states in plastically deformed p-type silicon crystals are investigated by means of both the Hall effect and the deep level transient spectroscopy (DLTS). The characteristics in the carrier concentration versus temperature relation of a deformed crystal are shown to be described satisfactorily with the use of three energy levels detected by DLTS on the assumption that the electrically active centers induced by deformation are distributed discretely within the crystal and electrostatic interaction between the charged centers plays no significant role in the occupation statistics of the defect states.
