ABSTRACT
The dislocation microwave conductivity of germanium, discovered earlier has been studied in high-purity samples doped by thermal-neutron bombardment. This doping method made it possible to carry out measurements with a wittingly uniform dopant distribution. So, at least for high-purity germanium the occurrence of the dislocation electric conductivity is not related to the necessity of impurity-atoms or point-defects diffusion towards dislocations.
