Characterization of Dislocation and Stacking Fault in Electron Irradiated Germanium

Two types of (113) faulted dislocation loops, interstitial type and vacancy type, can be introduced by 2MeV electron irradiation. By using lattice imaging technique together with diffraction contrast technique in an electron microscope, the atomic displacement situation around these faulted loops and the origin of electron microscope image contrast from the dislocation surrounding the stacking fault have been investigated in detail.