ABSTRACT
Plasma chemical etching of refractory metals is used for manufacturing of contact lines between the elements of a large and super large integrated circuits, masks for X-ray lithography. It gives the possibility to reproduce the masks elements with super small size as shown in reviews and original articles and others. There are a lot of works concerning of the plasma chemical etching of refractory metals and their alloys. However, they deal usually with technological aspects of the etching. It is much larger than characteristic values at which saturation occurs on the dependence of the ion stimulated etch rate on the flux of halogen containing particles. But the etch rates for refractory metals in plasma depend on the fluxes of halogen atoms and halogenated radicals. The dependence of etch rates on oxygen additions and on the discharges power under constant fluxes of charged particles and surface temperature are used to separate the contribution of the diverse neutral particles.
