Plasma Enhanced and Electron Beam Assisted CVD of SiO2 Thin Films From Free Jets

In this paper, a new method of thin films deposition from free jets is submitted for consideration. Supersonic low density jets of N₂O and the mixture of 5% SiH₄ in argon expanding into vacuum are used to produce SiO₂ films on a silicon substrate at a low temperature (Ts = 200°C). Gases in the jet are excited by the rf discharge or by an electron beam (E = 5keV) crossing the free jet. This method allows one to obtain a linear connection of the film growth rate with gas flow density and the current of the electron beam, which enables one to control the process of film growth.