ABSTRACT
In the past decennia many new materials and surface treatment methods have evolved by the application of plasma induced processes. In the IC technology the primary goal is quality. The process rate, and with that the duration of the process, is of secondary importance. Microwave plasmas have a larger electron density and radical formation. Clearly the atomic plasma beam deposition is intermediate in growth rate between classical plasma enhanced vapour deposition and low pressure plasma spraying. It is clear that high density plasmas need relatively lower power densities per electron. Alternatively, the monomer can be injected after expansion of the plasma beam in the vacuum deposition chamber. The alternative way of injection is through a ring with many holes around the plasma. It is clear that the principle of the method is to produce a highly ionized strong flowing plasma with minimum power.
