ABSTRACT
In this paper we simulate physical properties of thin-film transistor (TFT) using adaptive computing algorithm. Based on the finite volume approximation, the monotone iterative method, a posteriori error estimation, and the one-irregular meshing technique, a two-dimensional drift diffusion (DD) model of TFT is numerically solved. The grain boundary effect is considered and modelled when solving the TFT’s DD model. For each decoupled partial differential equation, our numerical scheme converges monotonically and adaptively captures variations of the computed solutions. Various biasing conditions have been verified on the simulated device to demonstrate the accuracy of method. The proposed adaptive computing algorithm also shows very good performance in terms of the mesh refinements.
