ABSTRACT

In this paper, an analytical solution of Poisson equation for double-gate MOSFET is presented. An explicit surface potential function is also derived to make the whole solution be a fully analytical one. The resulting solution provides an accurate description for partially and fully depleted devices in regions of operation. Doping concentration in silicon region is also considered. A comparison with numerical data shows that the solution gives an accurate approximation of potential distribution for a nano-scale doublegate MOSFET in all regions of operation.