ABSTRACT

Semiconductor devices have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniàturized 2D devices and advanced 3D structures. Plasma Doping provides superior performance of physical and electrical characteristics.