ABSTRACT
FeRAM and MRAM are promising non-volatile random access memory candidates and have been put into mass production before other new memories. The remaining scalability issues for FeRAM and MRAM are rapidly being resolved by introduction of new materials, processes, structures, memory cell circuits, and architectures. The performance of the 1T1C FeRAM was improved by optimizing its memory cell circuit and by using a ferroelectric capacitor with large, stable remanent polarization charges. The 6T4C FeRAM shows unlimited read/write endurance. The chain FeRAM has a memory cell as small as that of a DRAM. The readout margin of the MRAM was increased by using single-crystal MgO as an MTJ insulator. The half-select disturb of the MRAM has been greatly improved by the toggle writing, thermal select writing, and spin torque transfer switching schemes. The write current of the MRAM was reduced by spin torque transfer switching to 1/10. The performances of FeRAM and MRAM are improving as the demand for low power consumption devices increases.
