ABSTRACT
In this paper, we will present a general overview of different technological approaches suitable for charge storage memories. Several solutions to extend the floating gate Flash memory technology to the 32 nm, and possibly 22 nm nodes, are presented. In particular, new modules (discrete traps memories, and more specifically silicon nanocrystal memories), new materials (high-k materials for the interpoly layer) and innovative architectures (FinFlash memories) are discussed. Moreover, hybrid approaches which make use of organic molecules as storage sites will be also introduced. Finally the main theoretical limits of ultra-scaled charge storage memories (i.e. reliability issues linked to few electron phenomena) will be analyzed, opening the path to the introduction of disruptive technologies based on new storage mechanisms.
