ABSTRACT
The semiconductor industry has reached its smaller dimension limit. Therefore, the devices that operate under such a restriction should have low power consumption. These devices and their realization can be achieved by multiferroic tunnel junctions (MFTJ), which have one ferroelectric layer, and metal electrodes are made of ferromagnetic materials. Multiferroic materials are widely used due to coupling between the ferroelectric and magnetic states. Moreover, nowadays the voltage-controlled spintronics devices have a multiferroic or magnetoelectric tunnel barrier. Here, we have discussed the properties of magnetoelectric materials in context to the spintronics and energy-harvesting behavior. Some devices based on magnetoelectric materials, such as spintronics and energy harvesting, are discussed. The first part covers the physics of such devices, and the second part deals with the energy-harvesting studies by the use of multiferroic/magnetoelectric composites. The harvesting devices that can harvest the vibration and magnetic stray energy are also discussed.
