ABSTRACT
The developement of new infrared detectors and imaging systems with high sensitivity and ease of manufacture is necessary for numerous military and commercial applications. As quantum well infrared photodetectors have demonstrated high detectivity and long wavelength photoresponse with narrow spectral linewidth in photoconductive devices. The GalnP layers can be grown by metallorganic chemical vapor deposition at the growth temperature between 500 to 600°C at either atmospheric pressure or low pressure. A correlation has been established between the degree of structural ordering in GalnP and the bandgap energy measured by photo-luminescence or electroreflectance which indicates that the disorder-order transition is reflected in the optical transition. T. Suzuki et al., also observed by transmission electron microscopy imaging an intermixing of disordered and ordered phases as well as antiphase boundaries on partially ordered phases, with a variation of the relative extensions of the disordered phase, antiphase boundaries, and ordered phases corresponding to a short or long range structural order.
