Impact of MgO interfacial layer of gate dielectric engineered monolayer MoS2 FET

The impact of MgO (Magnesium Oxide) interfacial layer with gate dielectric engineered to improve the drain current and transconductance of monolayer MoS₂ Field effect transistor (MoS₂ FET) is studied. Atomistix Tool Kit (ATK) is used to analyze the interface charge density between TiO₂ and HfO₂ dielectric material with monolayer MoS2 material. The device simulation is performed using numerical simulation. NEGF MS model is used for 10nm channel length of MoS₂ FET. It is observed that TiO₂ gate dielectric and 1nm of MgO interfacial layer for monolayer MoS₂ FET exhibits better on current (Ion) and lower subthreshold swing as compared to HfO₂ dielectric. The optimized device achieved on current of 1883 μA/μm, sub-threshold swing of 81mV/dec and transconductance of 4.2mS/μm.