ABSTRACT
The Microelectronics Development for European Applications initiative first defined the domains More Moore and More than Moore, which respectively distinguished Complementary Metal Oxide Semiconductor and the devices that were more application oriented and susceptible to improve the diversification of integrated circuits. The demonstration of the first silicon-based Metal Oxide Semiconductor field-effect transistor (MOSFET) in 1960, 30 years after the invention of field effect devices, was certainly a major step in the development of future integrated circuits. MOSFET was an appealing solution to envisage high input impedance-based devices that were bringing in low power consumption-actuated devices. The choice of the active device material could increase the internal electric field at any junction necessary to obtain nonlinear characteristics used in present electron devices. In parallel with micro and nanoelectronics development, different types of devices, such as microelectromechanical systems, have been developed, which were feasible by using the silicon integrated circuit technology: this effect, defined in the 1960s, is named pervasiveness.
