ABSTRACT
For the last few decades, silicon-based devices were having high demand. As conventional metal-oxide-semiconductor field effect transistor (MOSFET) approaches its scaling limits many novel device structures have been explored. Graphene is one of the new material seeking big demand due to their miracle properties. When graphene transistors are used in place of silicon for electronic applications, the main obstacle is the absence of bandgap in graphene. Various techniques used to increase the bandgaps is investigated here. This project is to compare various dopants influence on different graphene structures. Electronic transport properties of different graphene structures like nanoribbons, single gate graphene field effect transistor, dual gate graphene field effect transistor and bilayer graphene structures were examined. Along with pristine Structures, doped structural changes were also examined. The main dopants used for evaluations include nitrogen, phosphorous and sulphur.
