ABSTRACT
In this paper, nanoindentation experiments were carried out at different load levels to understand deformation characteristics of SiC at various length scales. Grain orientation plays an intrinsic role in defining the mechanical response of SiC at nanoscale. The size effect is attributed to two deformation mechanisms, which are associated with strain gradient and flaw population, respectively. The response of SiC subjected to irradiation damage is determined by the microstructural change caused by irradiation, represented by a shallow Ga-ion implanted layer on the surface and an amorphous layer underneath.
