ABSTRACT
Memristors are effectively variable resistors with memory whose resistance can be modified electrically. The state of internal resistance is a function of the history of the applied voltage and current. Such devices have the ability to store and process data and provide for several attractive performance characteristics that make them more capable of solving computing problems encountered nowadays than conventional complementary metal-oxide semiconductor-based technology. Two-terminal resistance switches are often built out of a simple conductor/insulator/conductor stack, and the insulator is often made of a metal oxide. Although the idea for such devices was conceived as early as the 1960s, only recent progress in the field has been able to exploit useful features such as fast operation speed, low energy consumption, and high endurance. The chapter reviews progress in the development and understanding of memristive devices. High speed, high endurance, long retention, and repeatable and reproducible behavior are generally preferred for traditional memory applications.
