ABSTRACT
This chapter focuses on the fabrication of AlGaN/GaN heteroepitaxies for High Electron Mobility Transistors (HEMTs). Samples were developed using magnetron sputtering with multiple combinations of parameters, power (50W and 70W) and pressure (3, 9, and 15 mT). Silicon (Si) and sapphire (Al2O3) wafers were used as substrates. A study of the elemental and surface characterization was conducted to measure the atomic percentages of the compounds and to observe the topography of the device. The elemental composition and the crystal lattices of the alloys were characterized by X-ray Photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). While the topography was of the surfaces was captured using Scanning Electron Microscopy (SEM) and Atomic Force Microscope (AFM).
