ABSTRACT
This chapter highlights the developments in metamorphic high electron mobility transistor (MHEMT) which is considered as a cost effective replacement for high performance InP HEMTs for next generation terahertz applications. The chapter discusses the submillimeter wave and terahertz frequency applications especially in space, defence and medical fields. The chapter covers symmetrical and asymmetrical structure based MHEMTs and their DC and RF characteristics. The impact of device scaling on the DC and RF performance of MHEMTs are also discussed in this chapter. Another highlight of this chapter is it provides more than 200 references about this area which will be helpful for the researchers to learn more about the design and challenges in MHEMTs.
