ABSTRACT
The rapid down-scaling of semiconductor devices towards gigascale integration level is causing a fundamental change from experiment-dominated development to simulation-dominated development of new electronics technology. Therefore the high cost and complexity of fabrication is the essence of the gigascale challenge to bring new technology to the market faster and cheaper. In order to accomplish the goal, the device simulation is more and more important to lead new generation development. Nowadays, device modeling development also meets the gigascale challenge because of rapid progress in materials and device structures incorporating complex-geometry and quantum effects [1,2]. To meet the gigascale challenges, a device simulator needs to be designed, which can be able to provide more extensible device simulations and characteristics in the framework of quantum mechanics (QM). In the nano-scale device simulation of AlGaN/GaN or AlGaAs/GaAs based HEMTs, modeling plays a major role for the first hand information and hence small-signal model developed is presented here.
