ABSTRACT
In this chapter, an analytical model for single gate AlInSb/InSb HEMT device has been developed. A 2D sub threshold analysis of the proposed device is done to evaluate the channel potential, electric field, sub threshold drain current which exhibits superior performance with AlInSb/InSb in terms of short channel effects and electron mobility in the channel. In addition to the above advantages, the AlInSb/InSb material is extensively used in high gain and low noise applications. Expression for channel potential, electric field, threshold voltage, drain current have been obtained. From the simulative study, we observe that the step function in channel potential suppresses the SCEs. The study of AlInSb/InSb HEMTparameters of the device by considering the variation of the first subband ,the second subband and sheet carrier charge density( with applied gate voltage() and the performance of the device was compared for various temperatures. The scaling theory for single gate AlInSb/InSb HEMT is derived with Effective conducting path effect. The potential in the effective conducting path and a simple scaling equation has been developed and on solving this equation the minimum channel potential Фdeff, min and the new scaling factor αis obtained to model the subthreshold behavior of high electron mobility transistors
