Field-effect transistors (FETs) in today’s integrated circuits are facing the problem of lowering power dissipation when scaling down the supply voltage further. Tunneling FETs (TFETs) are one of the solutions as quantum-mechanical band-to-band tunneling avoids the thermal injection limit. The booming two-dimensional (2D) materials can maintain excellent device electrostatics, rich in species and have an atomic thickness without dangling bonds, high mobility, and high ON currents. A combination of 2D materials and TFETs technology can be a new revolution for high performance. In this chapter, the principle of TFETs, the feasibility of TFETs using layered 2D materials and the current status in this research field are discussed.