ABSTRACT
Nanocarbon materials form a large family, with some well-known members such as fullerene, carbon nanotube (CNT), and graphene standing out for their unique physical and/or chemical properties. This chapter focuses on growth methods of nanocarbon materials. It discusses the growth of CNT and graphene for development toward their eventual integration into integrated circuit manufacturing. The chapter briefly introduces the growth mechanisms and common parameters for each growth method, and comment on its suitability for device integration purposes. It discusses the three kinds of nanocarbon materials: CNT, graphene, and a novel structure containing both CNT and graphene, which is referred to as CNT–graphene heterostructure. There are two growth models to describe the CNT growth process by chemical vapor deposition methods, i.e., base-growth model and tip-growth model. For CNTs, growth temperature, alignment, areal density, and diameter distribution are the main considerations, especially for on-chip interconnect applications.
