ABSTRACT
Intense researches on perovskite solar cells have achieved an impressive efficiency of 23.3%. Apart from solar cells, perovskite materials are finding more and more applications like that in LED, FET, Nano LASER, Photo-detectors, etc. Recently, hectic investigations are reported on the memory and switching potential of perovskites. Materials showing biostability by resistive switching are the ideal candidates for memory device fabrication. Perovskite material shows J-V hysteresis, have a tuneable bandgap and long electron-hole diffusion length. Along with these properties and low cost, synthesis methods make them promising candidates for next-generation volatile and non-volatile memory devices. In this chapter, the characteristic aspects of memory devices, in general, are first described and the same has been extended to the memory effects in perovskites. This is followed by a discussion on different types of conduction mechanisms in perovskite materials under a bias voltage which causes resistive switching. To analyze the advancement in perovskite memory devices, different perovskite memory devices fabricated so far are considered. Their synthesis methods, different layers used for electron-hole transport, memory properties like on/off ratio, retention time, operating voltage, and power consumption are critically evaluated. The future scope of perovskite materials in memory device fabrication is also discussed.
