ABSTRACT
1. Introduction
Polyarenemethylidenes (PAM) have been predicted to be low gap polymers with good semiconducting and photoelectrical properties (Brödas 1985). Based on VEH (Valence Effective Hamiltonian) calculations these systems should have a bandgap Eg of about 1 eV a value also observed in the case of polyisothianaphthene (PITN) (Wudl 1984).
