ABSTRACT
ABSTRACT: Metal-insulator-semiconductor field-effect transistors, MISFET, were fabricated from vacuum evaporated conjugated α-sexithienyl, α-6T, and characterized. As other organic based FET's, these devices operate through the injection of majority carriers in an accumulation channel. After a 3 hour heat treatment at 120°C, the obtained field effect mobility reaches the value of 10-3 cm2V-1 s-1, the highest reported one for an organic semiconductor. The characteristics of these devices can be further improved by reducing the ohmic current flowing in the bulk of the semiconductor, leading to thin film transistors.
