ABSTRACT
The infrared photoconductivity spectra of un-intentionally doped n — Hg1-xCdxTe with x=0.2-0.4 were measured at 4.2K in the magnetic field up to 10 Tesla in Faraday configuration. Both the intrinsic and the extrinsic photoconductivity were observed. The results from these samples provide direct evidence that two trap levels in the energy gap edge and two resonant defect levels in the conduction band and an acceptor shallow level with activation energy about 7meV for these x-value samples.
